➀ The study explores the role of Ti and Pt electrodes in resistance switching variability of HfO2-based resistive random access memory. ➁ It investigates the mechanism of electroforming in metal oxide memristive switches. ➂ The research examines the impact of oxygen vacancies in HfO2-based gate stack breakdown. ➃ It also looks into the direct observation of oxygen movement during resistance switching in NiO/Pt film. ➄ The paper discusses the development of electronic synapses using layered two-dimensional materials.