<p>➀ IMEC has made progress on O-band GeSi QCSE EAMs on a 300mm silicon photonics platform.</p><p>➁ The new structure design of QCSE EAMs includes improvements to suppress p-type doping, adjust the p-region structure, and reduce metal absorption losses.</p><p>➂ The device demonstrates a 3dB bandwidth greater than 50GHz and a dynamic extinction ratio of 2.3dB at 64Gb/s.</p>
Related Articles
- NVIDIA Co-Packaged Optics with Silcion Photonics for Switching and Spectrum-XGS Scale-Across2 months ago
- Imec and ASML sign five year R&D agreement8 months ago
- Tower Semiconductor and Innolight Expand their Collaboration and Ramp Volume of Next-Generation SiPho Solutions for AI and Data Centers8 months ago
- STMicroelectronics To Enable Higher-Performance Cloud Optical Interconnect In Datacenters And AI Clusters8 months ago
- ST's 12-inch Silicon Photonics Platform8 months ago
- Silicon Photonics: Ultimate Guide10 months ago
- TSMC develops silicon photonics tech to ease overheating in GPU10 months ago
- Three Forces Driving the Aggressive Development of Silicon Photonics11 months ago
- Tower Semiconductor Releases 300mm Silicon Photonics Process as a Standard Foundry Offering11 months ago
- I will see you at the Substrate Vision Summit in Santa Clara12 months ago