➀ Finwave Semiconductor and GlobalFoundries are set to qualify Finwave’s GaN-on-Si technology on GlobalFoundries’ 80RFGaN process for mass production in H1 2926. ➁ Finwave’s technology promises excellent gain and efficiency at low voltages and high uniformity on 200mm wafers. ➂ The partnership aims to enhance RF Front-End integration on a single GaN-on-Si device, targeting applications in 5G, 6G, mmWave, and high-power Wi-Fi 7 systems.
Related Articles
- CEO Interview with Pierre-Yves Lesaicherre of Finwave CEO4 months ago
- GlobalFoundries and UMC Merger Speculation: UMC Responds4 months ago
- Repealing the CHIPS Act could dramatically shrink US chip market share, analysts say4 months ago
- Indie Semi to use GloFo 22nm FD-SOI process for radar SoCs5 months ago
- GlobalFoundries Announces Leadership Transition5 months ago
- GloFo to build New York packaging facility6 months ago
- US bans sales of 14nm and 16nm chips with over 30 billion transistors to China6 months ago
- Most Read – Memory chips, In-cabin radar IC, Xiver MEMS6 months ago
- Quantum Motion ICs fabbed by GloFo6 months ago
- IBM and GloFo settle dispute6 months ago