➀ Fudan University researchers have developed a scalable integration process for ultra-fast two-dimensional flash memory, aiming to address the speed limitations of current flash technologies. ➁ The team utilized chemical vapor deposition (CVD) to grow single-layer molybdenum disulfide as the channel material and optimized the interface engineering to achieve atomic-level flatness. ➂ The resulting flash memory devices offer 100,000 cycles of lifespan, 20 nanosecond programming speeds, and a 98% yield rate, significantly outperforming traditional silicon-based flash memory.