➀ Stress models in semiconductor device simulation account for mechanical stress effects on material electronic properties. ➁ Stress influences device performance by altering band structures, effective masses, and carrier mobilities. ➂ In Sdevice, stress models use deformation potential theory and k·p method to simulate these effects, considering band edge shifts and curvature changes. ➃ Stress also affects scattering mechanisms, which are reflected in the mobility models. ➄ NMOS and PMOS devices use embedded materials to induce stress, enhancing carrier mobilities and device performance.