1. WeEn Semiconductors introduced 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg. 2. The IGBTs are based on fine trench gate field-stop technology, offering improved dynamic control and a positive temperature coefficient for easier parallel operation. 3. The devices are rated for 650V 75A, 1.2kV 40A, and 1.2kV 75A, available in TO247 or TO247-4L packaging, with applications in solar inverters, motor controls, and more.