➀ The National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has successfully developed trench-type SiC MOSFET chips, breaking through the technical barriers of planar SiC MOSFET chips. ➁ These new chips offer a 30% improvement in conduction performance compared to planar types. ➂ The trench-type SiC MOSFET chips are expected to be applied in areas such as new energy vehicle electric drives, smart grids, and photovoltaic energy storage within a year, potentially increasing the range of electric vehicles by about 5% and reducing chip costs.