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August 27
- Engineers Develop New Two-Dimensional, Low-Power-Consumption Field-Effect Transistor➀ Engineers at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, have created a new two-dimensional field-effect transistor (FET) using single-crystalline aluminum oxide, which addresses issues of high gate leakage and low dielectric strength. ➁ The FETs are designed to be smaller and more energy-efficient, potentially reducing the need for frequent recharging in smartphones and enabling more features in devices without increasing their size. ➂ The development is crucial for the advancement of 5G devices and IoT applications, where miniaturization and efficiency are key.